-40%

1pcs FM24CL16B-GTR 16Kbit I2C interface FRAM/ferroelectric memory Chipsets

$ 1.73

Availability: 12 in stock
  • All returns accepted: Returns Accepted
  • Minimum Operating Temperature: -40 °C (-40 °F)
  • Number of Pins: 8
  • Series: FM24CL16B-GTR
  • Return shipping will be paid by: Buyer
  • MPN: Does Not Apply
  • Restocking Fee: No
  • Refund will be given as: Money Back
  • Maximum Operating Temperature: 85 °C (185 °F)
  • Brand: Unbranded
  • Packaging: Tube
  • Condition: New
  • Custom Bundle: Yes
  • Item must be returned within: 30 Days

    Description

    Specifications:
    Cypress F-RAM (Ferroelectric RAM) combines nonvolatile data storage with the high performance of RAM.
    F-RAM provides fast writes at full interface speed. F-RAM does not have any write delays and data is instantly nonvolatile. Traditional nonvolatile memories have delays of 5 or more milliseconds before data becomes nonvolatile. If power is disrupted, pending data is lost unless the system has extra capacitance or batteries to keep the system on until data is stored.
    F-RAM offers virtually unlimited endurance of 100 trillion read/write cycles. Traditional nonvolatile memories typically have less than 1 million cycle endurance, forcing system designers to use complex wear-leveling routines and up to 4x more density to prolong the lifetime of these memories.
    F-RAM consumes as low as 300 µA active and 6 µA standby current. Because of fast write speeds, F-RAM stays active for short periods of time, yielding very low energy consumption. Traditional nonvolatile memories with write delays must stay active for longer periods of time, resulting in higher energy consumption.
    Serial F-RAM offers a pin-to-pin and footprint compatible EEPROM replacement.
    Cypress F-RAM Key Features
    4 Kb to 4 Mb densities
    Serial QSPI, DSPI, SPI and I
    2
    C interface options
    Parallel interface options
    Low power, instant data capture on power loss
    100-trillion read/write cycle endurance
    No batteries required to store data on power loss; RoHS compliant
    Radiation and magnetic field tolerant
    Processor Companions with integrated analog and digital functions
    F-RAM Technology
    The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT change polarity in an electric field, thereby producing a power efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption, making F-RAM a reliable nonvolatile memory. A common misconception is that ferroelectric crystals are ferromagnetic or have similar magnetic properties. In fact, ferroelectric materials switch in an electric field and are not affected by magnetic fields.
    Package Including:
    Chip x 1pcs
    Payment:
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    Shipping:
    We Ship to Worldwide.
    Orders processed within 24-48 hours of payment verification. it will take 15-25 days for delivery. but Customs will random inspection some parcel, so that's why some parcel need more than four weeks to arrive. Shipping time is only estimated and not guaranteed.
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    Package to USA will Shipping by E-Package with Tracking Number(7-15 Days to Delivered). To other Countries will shipping by Post Air Mail without tracking number(ONLY when the order is over 20USD will supply Tracking Number Shipping Way!)(15-35 Days to Delivered)
    Items are shipped via China Post Air Mail.
    Guarantee
    :
    Good Good quality. Buy with confidence!
    If you are not satisfied when you receive your item, please return it within 7 days for a replacement or money back. Please contact me before you return it.
    Not accept returning of electronic components.
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